aot4n60/AOTF4N60 600v,4a n-channel mosfet general description product summary v ds i d (at v gs =10v) 4a r ds(on) (at v gs =10v) < 2.2 w 100% uis tested 100% r g tested for halogen free add "l" suffix to part number: aot4n60l & AOTF4N60l symbol v ds the aot4n60 & AOTF4N60 have been fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac-dc applications. by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. v units parameter absolute maximum ratings t a =25c unless otherwise noted 700v@150 drain-source voltage 600 aot4n60 AOTF4N60 top view to-220f to-220 g d s g d s g d s aot4n60 AOTF4N60 ds v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r q ja r q cs r q jc * drain current limited by maximum junction tempera ture. maximum case-to-sink a maximum junction-to-case c/w c/w derate above 25 o c parameter 0.83 0.28 w/ o c v 30 gate-source voltage t c =100c a 16 pulsed drain current c continuous drain current t c =25c i d 4 4* 2.7 avalanche current c 94 single plused avalanche energy g 188 2.5 repetitive avalanche energy c junction and storage temperature range maximum junction-to-ambient a,d power dissipation b p d t c =25c thermal characteristics 300 -55 to 150 104 35 aot4n60 AOTF4N60 maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds c c w 2.7* 1.2 -- units c/w 65 0.5 65 3.6 mj v/ns 5 a mj top view to-220f to-220 g d s g d s g d s aot4n60 AOTF4N60 rev8: feb 2012 www.aosmd.com page 1 of 6
aot4n60/AOTF4N60 symbol min typ max units 600 700 bv dss / ? tj 0.69 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3 4 4.5 v r ds(on) 1.9 2.2 w g fs 7.4 s v sd 0.77 1 v i s maximum body-diode continuous current 4 a i sm 16 a c iss 400 511 615 pf c oss 40 51 65 pf c rss 3.5 4.4 5.3 pf r g 3.3 4.2 6.3 w q g 15 18 nc q gs 3 3.6 nc q gd 7.6 9.1 nc t d(on) 20.2 30 ns t r 28.7 42 ns t d(off) 36 51 ns static drain-source on-resistance v gs =10v, i d =2a reverse transfer capacitance v gs =0v, v ds =25v, f=1mhz switching parameters i s =1a,v gs =0v v ds =40v, i d =2a forward transconductance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions v ds =5v i d =250 m a v ds =480v, t j =125c zero gate voltage drain current i dss zero gate voltage drain current v ds =600v, v gs =0v bv dss maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime dynamic parameters id=250 a, vgs=0v diode forward voltage turn-off delaytime v gs =10v, v ds =300v, i d =4a, r g =25 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-on rise time m a v ds =0v, v gs =30v v drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c gate drain charge total gate charge v gs =10v, v ds =480v, i d =4a gate source charge t d(off) 36 51 ns t f 27 40 ns t rr 212 254 ns q rr 1.6 1.9 m c this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time i f =4a,di/dt=100a/ m s,v ds =100v body diode reverse recovery charge i f =4a,di/dt=100a/ m s,v ds =100v turn-off delaytime g turn-off fall time a. the value of r q ja is measured with the device in a still air environm ent with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c, ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. l=60mh, i as =2.5a, v dd =150v, r g =25 ? , starting t j =25 c rev8: feb 2012 www.aosmd.com page 2 of 6
aot4n60/AOTF4N60 typical electrical and thermal characteristics 0 2 4 6 8 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 6 7 8 9 r ds(on) ( w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =2a 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0 2 4 6 8 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 6 7 8 9 r ds(on) ( w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =2a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 bv dss (normalized) t j (c) figure 5:break down vs. junction temparature rev8: feb 2012 www.aosmd.com page 3 of 6
aot4n60/AOTF4N60 typical electrical and thermal characteristics 0 3 6 9 12 15 0 5 10 15 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =480v i d =4a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area for aot4n60 (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 10: maximum forward biased safe operating area for AOTF4N60 (note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 1s 0 3 6 9 12 15 0 5 10 15 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =480v i d =4a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area for aot4n60 (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 10: maximum forward biased safe operating area for AOTF4N60 (note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 1s 0 1 2 3 4 5 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 11: current de-rating (note b) rev8: feb 2012 www.aosmd.com page 4 of 6
aot4n60/AOTF4N60 typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance for aot4n60 (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =1.2 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d single pulse 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 13: normalized maximum transient thermal imp edance for AOTF4N60 (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =3.6 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance for aot4n60 (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =1.2 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d single pulse 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 13: normalized maximum transient thermal imp edance for AOTF4N60 (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =3.6 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev8: feb 2012 www.aosmd.com page 5 of 6
aot4n60/AOTF4N60 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id - + vdc l vgs vds id bv i unclamped inductive switching (uis) test circuit & waveforms vds ar dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar rev8: feb 2012 www.aosmd.com page 6 of 6
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